jmnic product specification silicon pnp power transistors 2SA1249 description ? with to-126 package ? complement to type 2sc3117 ? high breakdown voltage ? large current capacity applications ? for color tv sound output,converters, inverters applications pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -180 v v ceo collector-emitter voltage open base -160 v v ebo emitter-base voltage open collector -6 v i c collector current -1.5 a i cm collector current-peak -2.5 a t a =25 ?? 1.0 p c collector power dissipation t c =25 ?? 10 w t j junction temperature 150 ?? t stg storage temperature -55~150 ??
jmnic product specification 2 silicon pnp power transistors 2SA1249 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-1ma; r be = ?t -160 v v (br)cbo collector-base breakdown voltage i c =-10 | a; i e =0 -180 v v (br)ebo emitter-base breakdown voltage i e =-10 | a ; i c =0 -6 v v cesat collector-emitter saturation voltage i c =-500ma; i b =-50ma -0.2 -0.5 v v besat base-emitter saturation voltage i c =-500ma; i b =-50ma -0.85 -1.2 v i cbo collector cut-off current v cb =-120v; i e =0 -1.0 | a i ebo emitter cut-off current v eb =-4v; i c =0 -1.0 | a h fe-1 dc current gain i c = -100ma ; v ce =-5v 100 400 h fe-2 dc current gain i c =-10ma ; v ce =-5v 90 f t transition frequency i c =-50ma ; v ce =-10v 120 mhz c ob output capacitance i e =0 ; v cb =-10v;f=1mhz 22 pf ? h fe-1 classifications r s t 100-200 140-280 200-400
jmnic product specification 3 silicon pnp power transistors 2SA1249 package outline fig.2 outline dimensions
jmnic product specification 4 silicon pnp power transistors 2SA1249
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